Display substrate, with inverted trapezoid-shaped isolation structure, method for manufacturing the same and display device

ABSTRACT

Provided are a display substrate, a method for manufacturing the display substrate, and a display device. The display substrate includes a display area, the display area including an opening area and an effective display area outside the opening area, wherein the display substrate includes: an array structure layer located in the effective display area; an isolation structure provided on a surface of the array structure layer surrounding the opening area, wherein the isolation structure has a first sidewall with an slope angle of greater than or equal to 90°; a first inorganic thin film covering the isolation structure.

CROSS-REFERENCE TO RELATED APPLICATION

The present disclosure is a Continuation application of U.S. applicationSer. No. 16/770,056 filed on Jun. 4, 2020, entitled “DISPLAY SUBSTRATE,METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE”, which is aSection 371 National Stage Application of International Application No.PCT/CN2019/128649, filed on Dec. 26, 2019, and claims the benefit ofpriority to Chinese Patent Application No. 201910016514.9 filed on Jan.8, 2019 in the National Intellectual Property Administration of China,the whole disclosure of each of which are incorporated herein byreference.

TECHNICAL FIELD

The present disclosure relates to a field of display technology, and inparticular, to a display substrate, a method for manufacturing the same,and a display device.

BACKGROUND

In recent years, organic light emitting diode (OLED) display device hasbecome a very popular emerging flat panel display product at home andabroad. This is because the OLED display device has characteristics ofself-luminescence, wide viewing angle, short reaction time, highluminous efficiency, wide color gamut, low operating voltage, thinpanel, large size and flexible panel, simple manufacturing process andthe like, and it also has low-cost potential.

SUMMARY

The purpose of the present disclosure is to provide a display substrateand a method for manufacturing the display substrate, and a displaydevice, so as to improve a reliability of a packaging thin film aroundthe periphery of a mounting hole.

To solve the above problems, a display substrate is provided, includinga display area, the display area including an opening area and aneffective display area outside the opening area, wherein the displaysubstrate includes:

an array structure layer located in the effective display area;

an isolation structure provided on a surface of the array structurelayer surrounding the opening area, wherein the isolation structure hasa first sidewall with an slope angle of greater than or equal to 90°;

a first inorganic thin film covering the isolation structure.

In some embodiments, the display substrate further includes a secondinorganic thin film located on a side of the first inorganic thin filmaway from the isolation structure.

In some embodiments, the display substrate further includes a fillingstructure provided between the first inorganic thin film and the secondinorganic thin film, wherein the filling structure is in contact withthe first sidewall of the isolation structure through the firstinorganic thin film.

In some embodiments, a sidewall of the filling structure in contact withthe second inorganic thin film has a slope angle of greater than orequal to 90°.

In some embodiments, the number of the isolation structures is two.

In some embodiments, the isolation includes a first side close to theeffective display area and a second side away from the effective displayarea, and the first side and the second side are opposite to each other;

wherein the filling structure is located on the first side and/or thesecond side of the at least two isolation structures.

In some embodiments, the at least two isolation structures aresequentially arranged around the opening area; and wherein the displaysubstrate further includes: at least one groove formed between theopening area and the effective display area, and the groove is coveredby the first inorganic thin film;

wherein adjacent isolation structures are isolated by the groove.

In some embodiments, in response to the filling structured is located onthe first side and the second side of the at least one isolationstructure, a sidewall of the filling structure on the second side of theisolation structure in contact with the second inorganic thin film has afirst slope angle, and a sidewall of the filling structure on the firstsidewall of the isolation structure in contact with the second inorganicthin film has a second slope angle;

wherein the first slope angle is different from the second slope angles,and the first slope angle and the second slope angle are both greaterthan or equal to 90°.

In some embodiments, in the two isolation structures located on twosides of the groove, when the filling structure is provided on thesecond side of an isolation structure close to the effective displayarea and the filling structure is provided on the first side of anotherisolation structure away from the effective display area;

a slope angle of a sidewall of the filling structure provided on thesecond side of the isolation structure close to the effective displayarea is a third slope angle; and a slope angle of a sidewall of thefilling structure provided on the first side of the isolation structureaway from the effective display area is a fourth slope angle;

wherein the third slope angle is different from the fourth slope angles,and the third slope angle and the fourth slope angle are both greaterthan or equal to 90°.

In some embodiments, the first inorganic thin film and the secondinorganic thin film are in direct contact on a surface of the isolationstructure away from the array structure layer.

In some embodiments, the second inorganic thin film is in direct contactwith the first inorganic thin film located on a bottom of the groove.

In some embodiments, the filling structure is provided on the firstside/the second side of the isolation structure close to the effectivedisplay area in the at least two isolation structures.

In some embodiments, a thickness of the filling structure is less thanor equal to a thickness of the isolation structure, and the thickness isa size along a direction perpendicular to the display substrate.

In some embodiments, the display substrate further includes an organicmaterial layer;

wherein the organic material layer is provided on the same layer as thefilling structure.

In some embodiments, the display substrate further includes a lightemitting structure layer;

wherein the light emitting structure layer includes a first portionlocated in an area surrounded by the at least two isolation structures.

In some embodiments, the display substrate further includes a lightemitting structure layer;

wherein the light emitting structure layer includes a third portionlocated on a surface of the isolation structure away from the arraystructure layer.

In some embodiments, the display substrate further includes a lightemitting layer;

wherein the light emitting structure layer includes a second portionsurrounding the isolation structure close to the effective display areain the at least two isolation structures.

A display device is further provided, including the display substratedescribed above.

A method for manufacturing a display substrate is further provided, thedisplay substrate includes a display area, the display area includes anopening area and an effective display area outside the opening area,wherein the method includes:

producing an array structure layer located in the effective displayarea;

forming at least one isolation structure around the opening area on asurface of the array structure layer, wherein the isolation structurehas a first sidewall with a slope angle of less than or equal to 90°;

forming a first inorganic thin film covering the isolation structure.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings are used to provide a further understanding of thetechnical solutions of the present disclosure, and constitute a part ofthe specification. The drawings are used to explain the technicalsolutions of the present disclosure together with the embodiments of thepresent application, and do not constitute limitations on the technicalsolutions of the present disclosure.

FIG. 1 is a schematic structural top view of an OLED display substrateaccording to some embodiments of the present disclosure;

FIG. 2 is a schematic view of the A-A cross-sectional structure in FIG.1 ;

FIG. 3 is a flowchart of a method for manufacturing a display substrateaccording to some embodiments of the present disclosure;

FIG. 4 is a schematic structural view of a display substrate afterforming an active layer during a manufacturing process according to someembodiments of the present disclosure;

FIG. 5 is a schematic structural view of a display substrate afterforming a gate electrode during a manufacturing process according tosome embodiments of the present disclosure;

FIG. 6 is a schematic structural view of a display substrate afterforming a source electrode and a drain electrode during a manufacturingprocess according to some embodiments of the present disclosure;

FIG. 7 is a schematic structural view of a display substrate afterforming a first electrode layer during a manufacturing process accordingto some embodiments of the present disclosure;

FIG. 8 is a schematic structural view of a display substrate afterforming an isolation substrate during a manufacturing process accordingto some embodiments of the present disclosure;

FIG. 9 is a schematic structural view of a display substrate afterforming a pixel defining layer during a manufacturing process accordingto some embodiments of the present disclosure;

FIG. 10 is a schematic structural view of a display substrate afterforming a light emitting structure layer during a manufacturing processaccording to some embodiments of the present disclosure;

FIG. 11 is a schematic structural view of a display substrate afterforming a filling structure during a manufacturing process according tosome embodiments of the present disclosure;

FIG. 12 is a schematic structural view of a display substrate afterforming a first inorganic thin film during a manufacturing processaccording to some embodiments of the present disclosure;

FIG. 13 is a schematic structural view of a display substrate afterforming a filling structure during a manufacturing process according tosome embodiments of the present disclosure; and

FIG. 14 is a schematic structural view of a display substrate afterforming a second inorganic thin film during a manufacturing processaccording to some embodiments of the present disclosure.

DETAILED DESCRIPTION OF THE EMBODIMENTS

To make the objectives, technical solutions, and advantages of thepresent disclosure clearer, the embodiments of the present disclosurewill be described in detail below with reference to the drawings. Itshould be noted that the embodiments in the present application and thefeatures in the embodiments may be arbitrarily combined with each otherwithout conflict.

An flexible OLED display device may be folded or curled like paper.After folding an edge of the flexible display device, narrow borderdisplay or even borderless display may be realized, and the screen ratioof the display device is improved. When narrow-border or borderlessdisplay is applied to mobile terminal products, it is necessary to setup a mounting hole in the display area of the flexible OLED displaydevice to reserve an installation positions of hardware such as frontcamera, earpiece, home button or the like on the mobile terminal device.

In the related art, the OLEDs in the OLED display device are verysensitive to water vapor and oxygen. In order to prevent water andoxygen from intruding into the OLEDs, the OLEDs are generally protectedby thin film packaging. When the mounting hole is opened in the displayarea of the flexible OLED display device, the packaging film is cut offat the edge of the mounting hole, so that the OLEDs around the mountinghole will not be protected by the packaging film, resulting in aseverely shortened product life. In order to prevent water and oxygenfrom intruding into the OLEDs from the periphery of the mounting hole,in the related art, an isolation structure is provided around themounting hole. During the formation of the OLED substrate, the isolationstructure causes the light emitting structure layer of the OLED withinan area surrounded by the isolation structure to be disconnected withthat outside the area surrounded by the isolation structure. Therefore,when the mounting hole is opened in the area surrounded by the isolationstructure, water and oxygen will not invade the light emitting structurelayer outside the area surrounded by the isolation structure from theperiphery of the mounting hole, ensuring the water and oxygen resistanceof the effective display area. However, the arrangement of the isolationstructure makes the packaging film around the isolation structurerelatively thin, and at the same time, the packaging film generates astress concentration area around the isolation structure. In the stressconcentration area, the packaging film is prone to cracks, whicheventually leads to the failure of the packaging film and reduces thereliability of the packaging film in the area around the mounting hole.

FIG. 1 is a schematic structural top view of an OLED display substrateaccording to some embodiments of the present disclosure. FIG. 2 is aschematic view of the A-A cross-sectional structure in FIG. 1 . As shownin FIG. 1 , the display substrate has a display area AA. The displayarea AA includes an opening area 100 and an effective display area 200located outside the opening area 100. The opening area 100 is used toopen a mounting hole for mounting hardware, such as front camera,earpiece, home button or the like, therefore, the opening area 100 is anon-light emitting area.

As shown in FIG. 2 , the display substrate includes a base substrate 10,a thin film transistor 20 provided on the base substrate 10, and aplanarization layer 30 provided on the thin film transistor 20. Thedisplay substrate further includes a first electrode layer 41 disposedon the planarization layer 30, and the first electrode layer 41 iselectrically connected to a drain electrode or a source electrode of thethin film transistor 20 through a via hole. The display substratefurther includes an isolation structure 50 disposed on a surface of theplanarization layer 30 away from the base substrate 10, and theisolation structure surrounds the opening area 100. There may be one ormore isolation structures 50. For example, as shown in FIGS. 1 and 2 ,there are two isolation structures 50. Two isolation structures 50 aresequentially arranged around the opening area 100, that is, a firstisolation structure 51 surrounds the opening area 100, and a secondisolation structure 52 surrounds the first isolation structure 51. Thecross section of the isolation structure 50 has an inverted trapezoidshape. As shown in FIG. 2 , the cross sections of the first isolationstructure 51 and the second isolation structure 52 have invertedtrapezoid shapes. Taking the second isolation structure 52 as anexample, as shown in FIGS. 1 and 2 , the second isolation structure 52includes a first side wall 521 facing away from the opening area 100 anda fourth side wall 522 facing to the opening area 100. The first sidewall 521 includes a first side 5211 away from the base substrate 10 anda second side 5212 close to the base substrate 10. The first side 5211is further away from the opening area 100 than the second side 5212 in adirection X parallel to the base substrate 10, that is, the slope angleθ1 of the first side wall 521 is an acute angle. The fourth side wall522 includes a fifth side 5221 away from the base substrate 10 and asixth side 5222 close to the base substrate 10. The fifth side 5221 iscloser to the opening area 100 than the sixth side 5222 in the directionX parallel to the base substrate 10, that is, the slope angle θ2 of thefourth side wall 522 is an acute angle. The first isolation structure 51has a similar structure. The display substrate further includes a pixeldefining layer 43 disposed on the first electrode layer 41, and a lightemitting structure layer 42 disposed on the pixel defining layer 43.Since the cross section of the isolation structure 50 has an invertedtrapezoidal shape, the light emitting structure layer 42 is cut off atboth sides of the isolation structure 50 when the light emittingstructure layer 42 is formed, so that the light emitting structure layer42 is divided by the isolation structure 50 into a first portion 421located in the area surrounded by the isolation structure 50 and asecond portion 422 located in an area surrounding the isolationstructure 50.

In the embodiments, the case where the slope angles of both side wallsof the isolation structure 50 are acute angles is taken as an examplefor description. In other embodiments, the isolation structure 50 mayhave only one side wall with an acute angle of slope. Taking the secondisolation structure 52 as an example, the slope angle of one of thefirst side wall 521 and the fourth side wall 522 of the second isolationstructure 52 is an acute angle, and the slope angle of the other is anobtuse angle or a right angle. It may also be achieved that the lightemitting structure layer 42 is divided by the isolation structure 50, sothat the first portion 421 located in the area surrounded by theisolation structure and the second portion 422 located in the areasurrounding the isolation structure are discontinuous. The lightemitting structure layer 42 is disconnected at the side wall, providedwith an acute angle of slope, of the isolation structure 50.

The display substrate also includes a packaging film substantiallycovering the entire surface of the base substrate 10. The packaging filmincludes an inorganic film 60. The isolation structure 50, such as thesecond isolation structure 52, has an inverted trapezoidalcross-section. Therefore, the slope angles θ1 and θ2 of the two sidewalls of the second isolation structure 52 are both acute angles, whichresults in that slope angles β1 and β2 of the inorganic thin film 60 onboth sides of the second isolation structure 52 are also acute angles.Since the slope angles β1 and β2 are acute angles, the vertexes of theslope angles β1 and β2 become stress concentration areas. Cracks areprone to occur in the stress concentration area, leading to packagefailure and reducing the reliability of the packaging film around theopening area.

In order to improve the reliability of the packaging film around theisolation structure, the embodiments of the present disclosure provide amethod for manufacturing a display substrate. The display substrateincludes a display area AA. The display area AA is provided with anopening area 100 and an effective display area 200 located outside theopening area 100. The opening area 100 is used to open a mounting holeto install hardware such as front camera, earpiece, home key or thelike. Therefore, the opening area 100 is a non-light emitting area. FIG.3 is a flowchart of a method for manufacturing a display substrateaccording to some embodiments of the present disclosure. Themanufacturing method includes:

S1: providing a base substrate;

S2: producing an array structure layer on the base substrate;

S3: forming at least one isolation structure around the opening area onthe side of the array structure layer away from the base substrate, theisolation structure having a side wall with an acute angle of slope; and

S4: forming a filling structure on a side, where the side wall isprovided with an acute angle of slope, of the isolation structure.

In some embodiments, specifically, steps S3 and S4 may be performed asfollows.

In the step S3, at least one isolation structure is formed around theopening area on the side of the array structure layer away from the basesubstrate, wherein the isolation structure includes a first side wallfacing away from the opening area. The first side wall includes a firstside away from the base substrate and a second side close to the basesubstrate. The first side is further away from the opening area than thesecond side in a direction parallel to the base substrate, that is, theslope angle of the first side wall is an acute angle.

In the step S4, a first filling structure is formed on a side of thefirst side wall away from the opening area, wherein the first fillingstructure includes a second side wall facing to the first side wall anda third side wall facing away from the first side wall. A shape of thesecond side wall conforms to a shape of the first side wall. The thirdside wall includes a third side away from the base substrate and afourth side close to the base substrate. The third side is closer to theopening area than the fourth side in the direction parallel to the basesubstrate, that is, the slope angle of the third side wall is an obtuseangle.

In some embodiments, the isolation structure formed in the step S3further includes a fourth side wall facing to the opening area. Thefourth side wall includes a fifth side away from the base substrate anda sixth side close to the base substrate. The fifth side is closer tothe opening area than the sixth side in the direction parallel to thebase substrate, that is, the slope angle of the fourth side wall is anacute angle. The step S4 further includes forming a second fillingstructure on a side of the fourth side wall close to the opening area,wherein the second filling structure includes a fifth side wall facingto the fourth side wall and a sixth side wall facing away from thefourth side wall. A shape of the fifth side wall conforms to a shape ofthe fourth side wall. The sixth side wall includes a seventh side awayfrom the base substrate and an eighth side close to the base substrate.The seventh side is further away from the opening area than the eighthside in the direction parallel to the base substrate, that is, the slopeangle of the sixth side wall is an obtuse angle.

In the following embodiments, it is explained as an example that theslope angles of the first side wall and the fourth side wall of theisolation structure are both acute angles.

In the method for manufacturing a display substrate provided by someembodiments of the present disclosure, a filling structure is formed onboth sides of the isolation structure, that is, a first fillingstructure and a second filling structure. The filling structure is usedto eliminate the stress concentration areas of the inorganic thin film,thereby avoiding the formation of stress concentration areas on bothsides of the isolation structure by the inorganic film, which avoids theinorganic thin film from generating cracks on both sides of theisolation structure. Meanwhile, the uniformity of the thickness of theinorganic thin film is ensured, the packaging performance of theinorganic thin film is ensured, the packaging failure is avoided, andthe reliability of the packaging film on both sides of the isolationstructure (i.e., around the opening area) is improved.

The technical content of the present disclosure will be described indetail below through specific embodiments. Among them, the “patterningprocess” mentioned in the embodiments includes processes such as coatingphotoresist, mask exposure, development, etching, and strippingphotoresist, which are existing mature producing processes. Thedeposition may use known processes such as sputtering, evaporation,chemical vapor deposition, the coating may use a known coating process,and the etching may use a known etching manner, which are notspecifically limited herein.

Some embodiments of the present disclosure provide a method formanufacturing a display substrate. The display substrate includes adisplay area, and an opening area is provided in the display area. Themethod includes:

S1: provide a base substrate;

S2: producing an array structure layer on the base substrate;

S3: forming at least one isolation structure around the opening area onthe side of the array structure layer away from the base substrate,wherein the isolation structure has two side walls, each of which isprovided with an acute angle of slope, namely the first side wall andthe fourth side wall; and

S4: forming a filling structure on both sides of the isolationstructure, namely the first filling structure and the second fillingstructure, which are used to eliminate the stress concentration areas ofthe inorganic thin film formed on the filling structure.

In the embodiments, before the step S4, the manufacturing method furtherincludes forming a pixel defining layer and a light emitting structurelayer; after the step S4, it further includes forming a first inorganicfilm covering the filling structure and the isolation structure.

A top gate type TFT is taken as an example to describe in detail amethod for manufacturing a display substrate of some embodiments of thepresent disclosure.

In the step S1, a base substrate is provided.

In the step S2, an array structure layer is produced on the basesubstrate.

Specifically, FIG. 4 is a schematic structural view of the displaysubstrate after forming an active layer during a manufacturing processaccording to some embodiments of the present disclosure. A barrier layer76, a buffer layer 73, and an active layer 21 are sequentially formed onthe base substrate 10. As shown in FIG. 4 , the barrier layer 76 and thebuffer layer 73 are sequentially formed on the base substrate 10 byusing a chemical vapor deposition method. The active layer 21 is formedon the buffer layer 73 through a patterning process. The base substrate10 may be a flexible substrate, and a material thereof may includepolyimide. The material of the barrier layer 76 and the buffer layer 73may include one or more of silicon nitride, silicon oxide, and siliconoxynitride. The active layer may be made of a material of amorphoussilicon, polycrystalline silicon, or microcrystalline silicon, or ametal oxide material, and the metal oxide material may be indium galliumzinc oxide (IGZO) or indium tin zinc oxide (ITZO).

FIG. 5 is a schematic structural view of the display substrate afterforming a gate electrode during a manufacturing process according tosome embodiments of the present disclosure. A first insulating layer 74is formed on the active layer 21, and a gate electrode 22 is formed onthe first insulating layer 74. As shown in FIG. 5 , the first insulatinglayer 74 may be formed by a method commonly used in the art, such as achemical vapor deposition method. The gate electrode 22 is formed by apatterning process. The material of the first insulating layer 74 mayinclude one or more of silicon nitride, silicon oxide, and siliconoxynitride, and the material of the gate electrode 22 may include one ormore of platinum Pt, ruthenium Ru, gold Au, argentum Ag, molybdenum Mo,Chromium Cr, aluminum Al, tantalum Ta, titanium Ti, wolfram W and othermetals.

FIG. 6 is a schematic structural view of the display substrate afterforming a source electrode and a drain electrode during a manufacturingprocess according to some embodiments of the present disclosure. Asecond insulating layer 75 is formed on the gate electrode 22, and asource electrode 23 and a drain electrode 24 are formed on the secondinsulating layer 75. The source electrode 23 is electrically connectedto the active layer 21 through a first via hole penetrating the secondinsulating layer 75 and the first insulating layer 74, and the drainelectrode 24 is electrically connected to the active layer 21 through asecond via hole penetrating the second insulating layer 75 and the firstinsulating layer 74, as shown in FIG. 6 . The patterns of the sourceelectrode 23 and the drain electrode 24 may be formed on the secondinsulating layer 75 by using a patterning process. The materials of thesource electrode and the drain electrode may be the same, and mayinclude one or more of platinum Pt, ruthenium Ru, gold Au, argentum Ag,molybdenum Mo, Chromium Cr, aluminum Al, tantalum Ta, titanium Ti,wolfram W and other metals.

FIG. 7 is a schematic structural view of the display substrate afterforming a first electrode layer during a manufacturing process accordingto some embodiments of the present disclosure. A planarization layer 30substantially covering the entire surface of the base substrate 10 isformed on the source electrode 23 and the drain electrode 24, and afirst electrode layer 41 is formed on the planarization layer 30. Thefirst electrode layer 41 is electrically connected to the sourceelectrode 23 through a third via hole penetrating the planarizationlayer 30, as shown in FIG. 7 . In the embodiments, the first electrodelayer 41 serves as an anode layer of the OLED pixel. It is easy tounderstand that, in other embodiments, the first electrode layer 41 mayalso be configured to be electrically connected to the drain electrode24.

The aforementioned array structure layer 80 includes one or more of thebarrier layer 76, the buffer layer 73, the active layer 21, the firstinsulating layer 74, the gate electrode 22, the second insulating layer75, the source electrode 23, the drain electrode 24, the planarizationlayer 30 and the first electrode layers 41.

In the step S3, at least one isolation structure around the opening areais formed on the side of the array structure layer away from the basesubstrate, and the isolation structure has two side walls, each of whichis provided with an acute angle of slope, namely the first side wall andthe fourth side wall.

Specifically, FIG. 8 is a schematic structural view of the displaysubstrate after forming the isolation structure during a manufacturingprocess according to some embodiments of the present disclosure. Asshown in FIG. 8 , at least one isolation structure 50 around the openingarea 100 is formed on a top surface (i.e., a surface away from the basesubstrate 10) of the planarization layer 30. The isolation structure 50has two side walls, each of which is provided with an acute angle ofslope. In the embodiments, there are two isolation structures 50. Twoisolation structures 50 are sequentially arranged around the openingarea 100, that is, the first isolation structure 51 is arranged aroundthe opening area 100, and the second isolation structure 52 is arrangedaround the first isolation structure 51. The cross section of theisolation structure 50 has an inverted trapezoid shape.

Taking the second isolation structure 52 as an example, as shown inFIGS. 1 and 8 , the second isolation structure 52 includes a first sidewall 521 facing away from the opening area 100 and a fourth side wall522 facing to the opening area 100. The first side wall 521 includes afirst side 5211 away from the base substrate 10 and a second side 5212close to the base substrate 10. The first side 5211 is further away fromthe opening area 100 than the second side 5212 in a direction X parallelto the base substrate 10, that is, the slope angle θ1 of the first sidewall 521 is an acute angle. The fourth side wall 522 includes a fifthside 5221 away from the base substrate 10 and a sixth side 5222 close tothe base substrate 10. The fifth side 5221 is closer to the opening area100 than the sixth side 5222 in the direction X parallel to the basesubstrate 10, that is, the slope angle θ2 of the fourth side wall 522 isan acute angle. The first isolation structure 51 has a similarstructure. Therefore, the slope angles θ1 and θ2 of the side walls ofthe isolation structure 50 are both acute angles. In the embodiments,the isolation structure 50 has a circular ring shape. It is easy tounderstand that the isolation structure 50 may also have a polygonalshape, as long as the isolation structure 50 has a closed loop shapesurrounding the opening area 100. In the embodiments, the material ofthe isolation structure 50 may include a negative photoresist. Anegative photoresist film may be coated on the upper surface of theplanarization layer 30, and then a pattern of the isolation structure 50may be formed by method of exposure and development.

Between step S3 and step S4, the manufacturing method of the displaysubstrate further includes: forming a pixel defining layer on the firstelectrode layer.

Specifically, FIG. 9 is a schematic structural view of the displaysubstrate after forming the pixel defining layer during a manufacturingprocess according to some embodiments of the present disclosure. Asshown in FIG. 9 , in the effective display area 200, the pixel defininglayer 43 is formed on the first electrode layer 41. In general, across-sectional shape of the pixel defining layer 43 has a positivetrapezoid shape. In the embodiments, the cross-sectional shape of theisolation structure 50 is an inverted trapezoid, and the cross-sectionalshape of the pixel defining layer 43 is a positive trapezoid. At thesame time, the material of the isolation structure 50 and the materialof the pixel defining layer 43 usually include organic materials, andthe isolation structure and the pixel defining layer are formed byexposure and development. In order to form the pixel defining layer 43without affecting the isolation structure that has been formed, thephotoreaction polarity of the material of the pixel defining layer 43 isopposite to the photoreaction polarity of the material of the isolationstructure. In the embodiments, the material of the isolation structure50 includes a negative photoresist, then the material of the pixeldefining layer 43 includes a positive photoresist, so as to ensure thatthe formed Isolation structure will not be affected while forming thepixel defining layer 43.

It is easy to understand that in actual implementation, the order of thestep of forming the isolation structure 50 and the step of forming thepixel defining layer 43 may be interchanged.

Between step S3 and step S4, the manufacturing method of the displaysubstrate further includes: forming a light emitting structure layer onthe isolation structure and the pixel defining layer.

Specifically, FIG. 10 is a schematic view of the display substrate afterforming the light emitting structure layer during a manufacturingprocess according to some embodiments of the present disclosure. Asshown in FIG. 10 , in general, the light emitting structure layer 42 isformed on the isolation structure and the pixel defining layer 43 by anevaporation method. The slope angle of at least one side wall of theisolation structure 50 is an acute angle. In the embodiments, for theisolation structure 50, taking the second isolation structure 52 as anexample, it has a first side wall 521 and a fourth side wall 52 bothwith an acute angle of slope, the first isolation structure 51 has asimilar structure. As a result, when the light emitting structure layer42 is formed, the light emitting structure layer 42 is divided by theisolation structure 50, and the light emitting structure layer 42 isdivided by the isolation structure 50 into a first portion 421 locatedin the area surrounded by the isolation structure 50, a second portion422 located in the area surrounding the isolation structure 50, and athird portion 423 located on the upper surface of the isolationstructure 50. The first portion 421, the second portion 422, and thethird portion 423 are disconnected from each other. It is easilyunderstood that the light emitting structure layer 42 may include, forexample, a hole injection layer, a hole transport layer, a lightemitting layer, an electron transport layer, and an electron injectionlayer.

In the step S4, a filling structure which is in contact with both sidewalls of the isolation structure and is used to eliminate the stressconcentration areas of the inorganic thin film formed thereon is formed,and the slope angle of the side wall, for carrying the inorganic thinfilm, of the filling structure is an obtuse angle.

Specifically, FIG. 11 is a schematic view of the display substrate afterforming the filling structures during a manufacturing process ofaccording to some embodiments of the present disclosure. As shown inFIG. 11 , the filling structure 70 on both sides of the isolationstructure 50 is formed on the light emitting structure layer 42, and thefilling structure 70 is used to eliminate the stress concentration areasof the inorganic thin film subsequently formed thereon. In theembodiments, the second isolation structure 52 is taken as an examplefor specific description. The cross section of the second isolationstructure 52 is inverted trapezoid, in other words, the slope angles ofboth side walls of the second isolation structure 52 are acute angles,then it is necessary to form the filling structure 70 in contact withthe side wall of the structure 52 on both sides of the second isolationstructure 52. The filling structure 70 includes a first fillingstructure 71 and a second filling structure 72.

Specifically, the first filling structure 71 is formed on a side of thefirst side wall 521 of the second isolation structure 52 away from theopening area 100. The first filling structure 71 includes a second sidewall 711 facing to the first side wall 521 and a third side wall 712facing away from the first side wall 521. The shape of the second sidewall 711 conforms to the shape of the first side wall 521. In theembodiments, the second side wall 711 is in contact with the first sidewall 521. The third side wall 712 includes a third side 7121 away fromthe base substrate 10 and a fourth side 7122 close to the base substrate10. The third side 7121 is closer to the opening area 100 than thefourth side 7122 in the direction X parallel to the base substrate 10,that is, the slope angle λ1 of the third side wall 712 is an obtuseangle. The second filling structure 72 is formed on a side of the fourthside wall 522 of the second isolation structure 52 close to the openingarea 100. The second filling structure 72 includes a fifth side wall 721facing to the fourth side wall 522 and a sixth side wall 722 facing awayfrom the fourth side. The shape of the fifth side wall 721 conforms tothe shape of the fourth side wall 522. In the embodiments, the fifthside wall 721 is in contact with the fourth side wall 522. The sixthside wall 722 includes a seventh side 7221 away from the base substrate10 and an eighth side 7222 close to the base substrate 10. The seventhside 7221 is further away from the opening area 100 than the eighth side7222 in the direction X parallel to the base substrate 10, that is, theslope angle λ2 of the sixth side wall 722 is an obtuse angle.

After the filling structure 70 is formed, when the inorganic thin filmon the filling structure 70 is subsequently formed, the side walls ofthe second isolation structure 52 no longer carry the inorganic film,but is exposed by the exposed side wall of the filling structure 70,such as the first filling structure 71. The third sidewall 712 and thesixth sidewall 722 of the second filling structure 72 carry an inorganicthin film.

After the filling structure 70 is formed, when the inorganic thin filmon the filling structure 70 is subsequently formed, the side wall of thesecond isolation structure 52 no longer carries the inorganic film, butexposed side walls of the filling structure 70, such as the third sidewall 712 of the first filling structure 71 and the sixth side wall 722of the second filling structure 72, carry the inorganic thin film.

The process of forming the filling structure 70 may include: forming anorganic material layer on both sides of the isolation structure 50 onthe light emitting structure layer 42 using an inkjet printing method;and patterning the organic material layer (e.g., ashing) to form thepattern of the filling structure 70 contacting both side walls of theisolation structure 50. The slope angle of the side wall of the fillingstructure 70 for carrying the inorganic thin film is an obtuse angle. Inthe embodiments, the filling structure 70 is in direct contact with theboth side walls, each of which is provided with an acute angle of slope,of the isolation structure 50. The side wall of the filling structure 70for carrying the inorganic thin film is an exposed sidewall of thefilling structure 70, and the slope angle of the exposed sidewall is anobtuse angle. Therefore, the filling structure 70 may eliminate thestress concentration area of the inorganic thin film subsequently formedthereon.

When the organic material is printed on the light emitting structurelayer 42 using an inkjet printing method, the organic material liquidwill flow and diffuse, so that it can be sufficiently filled at bothside walls of the isolation structure 50. In the embodiments, thematerial of the filling structure 70 may include one or more of PET(polyethylene terephthalate), PEN (polyethylene naphthalate), PI(polyimide), PVC (polyvinyl chloride), PTFE (polytetrafluoroethylene),photoresist, epoxy resin, etc.

After step S4, the manufacturing method of the display substrate furtherincludes: forming a first inorganic thin film covering the fillingstructure, specifically including:

FIG. 12 is a schematic structural view of a display substrate afterforming a first inorganic thin film during a manufacturing processaccording to some embodiments of the present disclosure. As shown inFIG. 12 , after forming the filling structure 70, the first inorganicthin film 61 covering the filling structure 70 and the isolationstructure 50 is formed. The first inorganic thin film 61 may be formedby a chemical vapor deposition method.

In the embodiments, under the action of the filling structure 70, theslope angles of the side walls for supporting the first inorganic thinfilm on both sides of the isolation structure 50 (i.e., the exposed sidewalls of the filling structure 70) are obtuse angles. The slope anglesof the first inorganic thin film 61 on both sides of the isolationstructure 50 are also obtuse angles, so that the stress concentrationareas formed by the first inorganic thin film 61 on both sides of theisolation structure 50 may be eliminated. In this way, no cracks areformed on the first inorganic thin film 61 on both sides of theisolation structure 50, thereby ensuring the film thickness uniformityof the first inorganic thin film 61, ensuring the packaging performanceof the first inorganic thin film 61, avoiding the packaging failure, andimproving the reliability of the packaging film on both sides of theisolation structure (i.e., around the opening area).

It is easily understood that some embodiments of the present disclosuremay further include: forming an organic protective layer on the firstinorganic thin film 61; and forming a second inorganic thin film on theorganic protective layer. The organic protective layer and the secondinorganic thin film may be formed by methods known in the art.

In the above embodiments, the thin film transistors on the arraystructure layer are top-gate thin film transistors. It is easy tounderstand that the manufacturing method of the display substrateproposed by some embodiments of the present disclosure is alsoapplicable to bottom-gate thin film transistors.

Some embodiments of the present disclosure provide a method formanufacturing a display substrate. The display substrate includes adisplay area AA, and an opening area 100 is provided in the display areaAA. The manufacturing method includes:

S1: provide a substrate;

S2: producing an array structure layer on the base substrate;

S3: forming at least one isolation structure around the opening area onthe side of the array structure layer away from the base substrate,wherein the isolation structure has two side walls, each of which isprovided with an acute angle of slope, namely a first side wall and afourth side wall.

S4: forming a filling structure on both sides of the isolationstructure, namely, the first filling structure and the second fillingstructure, which are used to eliminate the stress concentration area ofthe inorganic thin film formed on the filling structure.

In the embodiments, before the step S4, the manufacturing method furtherincludes forming a pixel defining layer and a light emitting structurelayer, and forming a first inorganic thin film covering the isolationstructure. In the step S4, the organic protective layer is also formedin an area on a side of the isolation structure away from the openingarea 100, for example, the effective display area 200. After the stepS4, the manufacturing method further includes forming a second inorganicthin film covering both the filling structure and the isolationstructure.

The manufacturing method of the display substrate provided by someembodiments of the present disclosure will be described in detail belowby taking a top-gate TFT as an example.

In the embodiments, the steps S1-S3 and the steps of forming the pixeldefining layer and the light emitting structure layer are the same asthose in the previous embodiments, and will not be repeated here.

Between the step S3 and the step S4, the manufacturing method of thedisplay substrate further includes: forming a first inorganic thin filmcovering the isolation structure.

Specifically, referring to FIG. 2 , a first inorganic thin film 61covering the isolation structure 50 is formed on the light emittingstructure layer 42, the first inorganic thin film 61 substantiallycovers the entire upper surface of the base substrate 10, that is, thefirst inorganic thin film 61 also covers an outer surface of theisolation structure 50. The first inorganic thin film 61 may be formedon the light emitting structure layer 42 using a chemical vapordeposition method.

In the step S4, a filling structure which is in contact with the firstinorganic thin film and is used to eliminate the stress concentrationarea of the second inorganic thin film subsequently formed thereon isformed on both sides of the isolation structure. The slope angle of theside wall of the filling structure which is used to carry the secondinorganic thin film is an obtuse angle.

Specifically, FIG. 13 is a schematic structural view of a displaysubstrate after forming a filling structure during a manufacturingprocess according to some embodiments of the present disclosure. Theprocess of forming the filling structure may include: forming an organicmaterial layer filling both sides of the isolation structure 50 on thefirst inorganic thin film 61 using an inkjet printing method; patterningthe organic material layer to form an pattern of the filling structure70 which is in contact with the two side walls of the isolationstructure 50 through the first inorganic thin film 61, the fillingstructure 70 includes a first filling structure 71 and a second fillingstructure 72.

Specifically, a first filling structure 71 is formed on a side of thefirst side wall 521 of the second isolation structure 52 away from theopening area 100. The first filling structure 71 includes a second sidewall 711 facing to the first side wall 521 and a third side wall 712facing away from the first side wall 521. The shape of the second sidewall 711 conforms to the shape of the first side wall 521. In theembodiments, the second side wall 711 is in contact with the firstinorganic thin film 61. The third side wall 712 includes a third side7121 away from the base substrate 10 and a fourth side 7122 close to thebase substrate 10. The third side 7121 is closer to the opening area 100than the fourth side 7122 in the direction X parallel to the basesubstrate 10, that is, the slope angle λ1 of the third side wall 712 isan obtuse angle. A second filling structure 72 is formed on the side ofthe fourth side wall 522 of the second isolation structure 52 close tothe opening area 100. The second filling structure 72 includes a fifthside wall 721 facing to the fourth side wall 522 and a sixth side wall722 facing away from the fourth side wall 522. The shape of the fifthside wall 721 conforms to the shape of the fourth side wall 522. In theembodiments, the fifth side wall 721 contacts the first inorganic thinfilm 61. The sixth side wall 722 includes a seventh side 7221 away fromthe base substrate 10 and an eighth side 7222 close to the basesubstrate 10. The seventh side 7221 is further away from the openingarea 100 than the eighth side 7222 in the direction X parallel to thebase substrate 10, that is, the slope angle λ2 of the sixth side wall722 is an obtuse angle.

The slope angles of the side walls of the filling structure 70 forcarrying the second inorganic thin film to be formed are obtuse angles.Therefore, the filling structure 70 may eliminate the stressconcentration area of the second inorganic thin film formed subsequentlythereon. In the embodiments, the formed organic material layer coversthe entire upper surface of the substrate. Therefore, when the organicmaterial layer is patterned to form the filling structure 70, thepattern of the organic protective layer 63 may be simultaneously formed.In the embodiments, the filling structure 70 and the organic protectivelayer 63 are formed by the same process. The organic protective layer 63may play a role in planarization, and may also reduce the stress of theinorganic thin film in contact therewith.

When the organic material is printed on the first inorganic thin film 61by the inkjet printing method, the organic material liquid will flow anddiffuse, so that it can be sufficiently filled at both sides of theisolation structure 50. In the embodiments, the material of the fillingstructure 70 may include one or more of PET (polyethyleneterephthalate), PEN (polyethylene naphthalate), PI (polyimide), PVC(polyvinyl chloride), PTFE (polytetrafluoroethylene), photoresist, epoxyresin, etc.

As shown in FIG. 13 , the filling structure 70 located on both sides ofthe isolation structure 50 is formed on the first inorganic thin film61, and the filling structure is used to eliminate the stressconcentration area of the second inorganic thin film subsequently formedthereon. Specifically, the filling structure 70 is formed at both sidewalls of the isolation structure 50, where the slope angle is an acuteangle. The slope angle of the side wall of the filling structure 70 forsupporting the second inorganic thin film formed thereon (i.e., theexposed side wall of the filling structure 70, for example, the thirdside wall 712 of the first filling structure 71 and the sixth side wall722 of the second filling structure 72) is an obtuse angle, so that thefilling structure 70 may eliminate the stress concentration area of thesecond inorganic thin film subsequently formed thereon. In theembodiments, the second isolation structure 52 is taken as an examplefor specific description. The cross section of the second isolationstructure 52 is inverted trapezoid, that is to say, the slope angles ofthe side walls of the second isolation structure 52 are both acuteangles, then it is necessary to form filling structure 70 on both sidesof the second isolation structure 52 respectively. After the fillingstructure 70 is formed, when the second inorganic thin film forpackaging is subsequently formed, the two side walls of the secondisolation structure 52 no longer carry the second inorganic thin film,but the exposed side wall of the filling structure 70 carries the secondinorganic thin film.

After the step S4, the manufacturing method of the display substratefurther includes: forming a second inorganic thin film covering thefilling structure.

Specifically, FIG. 14 is a schematic structural view of the displaysubstrate after forming a second inorganic thin film during amanufacturing process according to some embodiments of the presentdisclosure. As shown in FIG. 14 , the second inorganic thin film 62 isformed on the entire surface of the base substrate 10 on which thefilling structure 70 and the organic protective layer 63 are formed. Thesecond inorganic thin film 62 may be formed by a chemical vapordeposition method.

In the embodiments, under the action of the filling structure 70, theslope angles of the side walls for supporting the second inorganic thinfilm on both sides of the isolation structure 50 (i.e., the exposed sidewall of the filling structure 70) are obtuse angles, thus, the slopeangles of the second inorganic film 62 on both sides of the isolationstructure 50 are also obtuse angles, so that the stress concentrationareas formed by the second inorganic film 62 on both sides of theisolation structure 50 may be eliminated. In this way, no cracks areformed on the second inorganic film 62 on both sides of the isolationstructure 50, thereby ensuring the film thickness uniformity of thesecond inorganic film 62, ensuring the packaging performance of thesecond inorganic film 62, avoiding the package failure, and improvingthe reliability of the packaging film on both sides of the isolationstructure 50 (i.e., around the opening area 100).

In the above embodiments, the thin film transistors on the arraystructure layer are top-gate thin film transistors. It is easy tounderstand that the manufacturing methods of the display substrateproposed by some embodiments of the present disclosure are alsoapplicable to bottom-gate thin film transistors.

Some embodiments of the present disclosure provide a display substrate.As shown in FIGS. 1 and 12 , the display substrate includes a displayarea AA. The display area AA is provided with an opening area 100 and aneffective display area 200 except the opening area 100. The displaysubstrate includes: a base substrate 10, and an array structure layer 80disposed on the base substrate 10; and at least one isolation structure50 disposed on a side of the array structure layer 80 away from the basesubstrate 10 and around the opening area 100. The isolation structure 50has a side wall with an acute angle of slope. In the embodiments, theisolation structure 50 has a shape of an inverted trapezoid, and theslope angles of both side walls thereof are acute angles.

The display substrate further includes a filling structure 70 disposedon both sides of the isolation structure 50 for eliminating the stressconcentration area of the inorganic thin film formed thereon, and theslope angle of the side wall of the filling structure 70 for carryingthe inorganic thin film is an obtuse angle.

The array structure layer 80 may include a thin film transistor 20disposed on the base substrate 10, a planarization layer 30 disposed onthe thin film transistor 20, and a first electrode layer 41 disposed onthe planarization layer 30. The isolation structure 50 is disposed on asurface of the planarization layer 30 away from the base substrate 10.It is easy to understand that the thin film transistor 20 and the firstelectrode layer 41 are both disposed in an area (i.e., the effectivedisplay area 200) on a side of the isolation structure 50 away from theopening area 100.

The display substrate further includes a pixel defining layer 43disposed on the first electrode layer 41, and a light emitting structurelayer 42 disposed on the isolation structure 50 and the pixel defininglayer 43. The light emitting structure layer 42 is divided by theisolation structure 50 into a first portion 421 located in an areasurrounded by the isolation structure 50 and a second portion 422located in an area surrounding the isolation structure 50. The firstportion 421 and the second portion 422 are disconnected from each other.The filling structure 70 is disposed on the light emitting structurelayer 42.

Further, the display substrate further includes a first inorganic thinfilm 61 covering both the filling structure 70 and the isolationstructure 50.

The display substrate may further include an organic protective layerdisposed on the first inorganic thin film and a second inorganic thinfilm disposed on the organic protective layer.

Some embodiments of the present disclosure provide a display substrate.As shown in FIGS. 1 and 14 , the display substrate includes a displayarea AA, and an opening area 100 is provided in the display area and aneffective display area 200 except the opening area 100. The displaysubstrate includes: a base substrate 10, an array structure layer 80disposed on the base substrate 10; and at least one isolation structure50 disposed on a side of the array structure layer 80 away from the basesubstrate 10 and around the opening area 100. The isolation structure 50has a side wall with an acute angle of slope. In the embodiments, theisolation structure 50 has a shape of an inverted trapezoid, and theslope angles of both side walls thereof are acute angles.

The display substrate further includes a filling structure 70 disposedon both sides of the isolation structure 50 for eliminating the stressconcentration area of the inorganic thin film formed thereon. The slopeangle of the side wall of the filling structure 70 for carrying theinorganic thin film is an obtuse angle.

The array structure layer 80 may include a thin film transistor 20disposed on the base substrate 10, a planarization layer 30 disposed onthe thin film transistor 20, and a first electrode layer 41 disposed onthe planarization layer 30. The isolation structure 50 is provided on asurface of the planarization layer 30 away from the base substrate 10.It is easy to understand that the thin film transistor 20 and the firstelectrode layer 41 are both disposed in an area (i.e., the effectivedisplay area 200) on a side of the isolation structure 50 away from theopening area 100.

The display substrate further includes a pixel defining layer 43disposed on the first electrode layer 41, and a light emitting structurelayer 42 disposed on the isolation structure 50 and the pixel defininglayer 43. The light emitting structure layer 42 is divided by theisolation structure 50 into a first portion 421 located in an areasurrounded by the isolation structure 50 and a second portion 422located in an area surrounding the isolation structure 50. The firstportion 421 and the second portion 422 are disconnected from each other.

Further, the display substrate further includes a first inorganic thinfilm 61 covering the isolation structure 50. The filling structure 70 isdisposed on the first inorganic thin film 61, and the filling structure70 contacts the first side wall of the isolation structure 50 throughthe first inorganic thin film 61.

The display substrate may further include an organic protective layer 63disposed on the first inorganic thin film 61, and a second inorganicthin film 62 covering the filling structure 70, the isolation structure50, and the organic protective layer 63. The organic protective layer 63and the filling structure 70 are formed by the same process. The organicprotective layer 63 is disposed in the effective display area 200, whichmay play a role in planarization, and may also reduce the stress of theinorganic film layer in contact therewith.

Based on the inventive concepts of the foregoing embodiments, someembodiments of the present disclosure also provide a display deviceincluding the display substrate of the foregoing embodiments. Thedisplay device may be any product or component with a display function,such as a mobile phone, a tablet computer, a television, a display, anotebook computer, a digital photo frame, a navigator, and the like.

In the description of the embodiments of the present disclosure, itshould be understood that the orientations or positional relationshipsindicated by the terms “upper”, “lower”, “front”, “rear”, “top”,“bottom”, “inner”, “outer”, etc. are based on the orientations orpositional relationships shown in the drawings, and is merely for theconvenience of describing the present disclosure and simplifying thedescription, rather than indicating or implying that the device orelement referred to must have specific orientations, or be constructedand operated in specific orientations, and therefore they may not beconstrued as limitations of the present disclosure

In the description of the embodiments of the present disclosure, itshould be noted that, unless otherwise clearly specified and limited,the term “contact” should be understood in a broad sense, for example,it may be directly connected or indirectly contacted through anintermediate medium. For those skilled in the art, the specific meaningof the above terms in the present disclosure may be understood inspecific situations.

Although the embodiments disclosed in the present disclosure are asdescribed above, the described contents are only the embodiments adoptedto facilitate understanding of the present disclosure, and are notintended to limit the present disclosure. Any person skilled in the artto which this disclosure belongs may make any modifications and changesin the form and details of implementation without departing from thespirit and scope disclosed in the present disclosure, but the patentprotection scope of the present disclosure still needs to be subject tothe scope defined in the appended claims.

What is claimed is:
 1. A display substrate, comprising a display area,the display area comprising an opening area and an effective displayarea outside the opening area, wherein the display substrate comprises:an array structure layer located in the effective display area; anisolation structure provided on a surface of the array structure layersurrounding the opening area, wherein the isolation structure has afirst sidewall with an slope angle of less than or equal to 90°; a firstinorganic thin film covering the isolation structure.
 2. The displaysubstrate according to claim 1, further comprising a second inorganicthin film covering the isolation structure, wherein the second inorganicthin film is located on a side of the first inorganic thin film awayfrom the isolation structure.
 3. The display substrate according toclaim 2, further comprising a filling structure provided between thefirst inorganic thin film and the second inorganic thin film, whereinthe filling structure is in contact with the first sidewall of theisolation structure through the first inorganic thin film.
 4. Thedisplay substrate according to claim 3, wherein a sidewall of thefilling structure in contact with the second inorganic thin film has aslope angle of greater than or equal to 90°.
 5. The display substrateaccording to claim 3, wherein the number of the isolation structures isat least two.
 6. The display substrate according to claim 5, wherein theisolation structure comprises a first side close to the effectivedisplay area and a second side away from the effective display area, andthe first side and the second side are opposite to each other; whereinthe filling structure is located on the first side and/or the secondside of at least one isolation structure.
 7. The display substrateaccording to claim 6, wherein the at least two isolation structures aresequentially arranged around the opening area; and wherein the displaysubstrate further comprises: at least one groove formed between twoadjacent isolation structures, and the groove is covered by the firstinorganic thin film; wherein adjacent isolation structures are isolatedby the groove.
 8. The display substrate according to claim 6, whereinthe filling structure is located on the first side and the second sideof the at least one isolation structure, a sidewall of the fillingstructure on the second side of the isolation structure in contact withthe second inorganic thin film has a first slope angle, and a sidewallof the filling structure on the first sidewall of the isolationstructure in contact with the second inorganic thin film has a secondslope angle; wherein the first slope angle is different from the secondslope angle, and the first slope angle and the second slope angle areboth greater than or equal to 90°.
 9. The display substrate according toclaim 7, wherein in the two isolation structures located on two sides ofthe groove, when the filling structure is provided on the second side ofan isolation structure close to the effective display area and thefilling structure is provided on the first side of another isolationstructure away from the effective display area; a slope angle of asidewall of the filling structure provided on the second side of theisolation structure close to the effective display area has a thirdslope angle; and a slope angle of a sidewall of the filling structureprovided on the first side of the isolation structure away from theeffective display area has a fourth slope angle; wherein the third slopeangle is different from the fourth slope angles, and the third slopeangle and the fourth slope angle are both greater than or equal to 90°.10. The display substrate according to claim 7, wherein the secondinorganic thin film is in direct contact with the first inorganic thinfilm located on a bottom of the groove.
 11. The display substrateaccording to claim 10, wherein the filling structure is provided on thefirst side and/or the second side of the isolation structure close tothe effective display area in the at least two isolation structures. 12.The display substrate according to claim 7, further comprising a lightemitting structure layer; wherein the light emitting structure layercomprises a first portion located in an area surrounded by the at leasttwo isolation structures.
 13. The display substrate according to claim7, further comprising a light emitting structure layer; wherein thelight emitting structure layer comprises a third portion located on asurface of the isolation structure away from the array structure layer.14. The display substrate according to claim 7, further comprising alight emitting layer; wherein the light emitting structure layercomprises a second portion located on a side close to the effectivedisplay area, of one of the at least two isolation structures which isaway from the opening area.
 15. The display substrate according to claim3, wherein the first inorganic thin film and the second inorganic thinfilm are in direct contact on a surface of the isolation structure awayfrom the array structure layer.
 16. The display substrate according toclaim 3, wherein a thickness of the filling structure is less than orequal to a thickness of the isolation structure, and the thickness is asize along a direction perpendicular to the display substrate.
 17. Thedisplay substrate according to claim 3, further comprising an organicmaterial layer; wherein the organic material layer is provided on thesame layer as the filling structure.
 18. A display device, comprisingthe display substrate according to claim
 1. 19. A method formanufacturing a display substrate, the display substrate comprising adisplay area, the display area comprising an opening area and aneffective display area outside the opening area, wherein the methodcomprises: producing an array structure layer located in the effectivedisplay area; forming at least one isolation structure around theopening area on a surface of the array structure layer, wherein theisolation structure has a first sidewall with a slope angle of less thanor equal to 90°; forming a first inorganic thin film covering theisolation structure.